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2 www.fairchildsemi.com 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. B2 Electrical Characteristics* T A=25°C unless otherwise noted * Non-recurrent square wave PW = 8.3ms Typical Characteristics Symbol Parameter Test Conditions Min. Max. Units VR Breakdown Voltage IR = 100µA IR = 5.0µA 100 75 V V VF Forward Voltage 1N914B/4448 1N916B 1N914/916/4148 1N914A/916A 1N916B 1N914B/4448 IF = 5.0mA IF = 5.0mA IF = 10mA IF = 20mA IF = 20mA IF = 100mA 620 630 720 730 1.0 1.0 1.0 1.0 mV mV V V V V IR Reverse Leakage VR = 20V VR = 20V, TA = 150°C VR = 75V 25 50 5.0 nA µA µA CT Total Capacitance 1N916A/B/4448 1N914A/B/4148 VR = 0, f = 1.0MHz VR = 0, f = 1.0MHz 2.0 4.0 pF pF trr Reverse Recovery Time IF = 10mA, VR = 6.0V (600mA) Irr = 1.0mA, RL = 100Ω 4.0 ns Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100 µA Figure 2. Reverse Current vs Reverse Voltage IR - 10 to 100V Figure 3. Forward Voltage vs Forward Current VF - 1 to 100 µA Figure 4. Forward Voltage vs Forward Current VF - 0.1 to 10mA 110 120 130 140 150 160 Ta=25 oC 1 2 3 5 10 20 30 50 100 Reverse Current, I R [uA] 0 20 40 60 80 100 120 10 20 30 50 70 100 Ta= 25 oC Reverse Voltage, V R [V] GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature 250 300 350 400 450 500 550 1 2 3 5 10 20 30 50 100 Ta= 25 oC Forward Current, I F [uA] 450 500 550 600 650 700 750 0.1 0.2 0.3 0.5 1 2 3 5 10 Ta= 25 o C Forward Current, I F [mA] |
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