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BUK454-800B Datasheet(PDF) 5 Page - NXP Semiconductors

No. de pieza BUK454-800B
Descripción Electrónicos  PowerMOS transistor
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK454-800B Datasheet(HTML) 5 Page - NXP Semiconductors

  BUK454-800B Datasheet HTML 1Page - NXP Semiconductors BUK454-800B Datasheet HTML 2Page - NXP Semiconductors BUK454-800B Datasheet HTML 3Page - NXP Semiconductors BUK454-800B Datasheet HTML 4Page - NXP Semiconductors BUK454-800B Datasheet HTML 5Page - NXP Semiconductors BUK454-800B Datasheet HTML 6Page - NXP Semiconductors BUK454-800B Datasheet HTML 7Page - NXP Semiconductors  
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Philips Semiconductors
Product Specification
PowerMOS transistor
BUK454-800A/B
Fig.13. Typical turn-on gate-charge characteristics.
V
GS = f(QG); conditions: ID = 2.4 A; parameter VDS
Fig.14. Typical reverse diode current.
I
F = f(VSDS); conditions: VGS = 0 V; parameter Tj
0
2
4
6
8
10
12
14
16
18
20
QG / nC
VGS / V
12
10
8
6
4
2
0
VDS / V =160
640
BUK454-800
0
1
2
BUK454-800A
VSDS / V
IF / A
6
5
4
3
2
1
0
Tj / C = 150
25
April 1993
5
Rev 1.100


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