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STD100NH03LT4 Datasheet(PDF) 5 Page - STMicroelectronics |
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STD100NH03LT4 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 15 page STD100NH03L Electrical characteristics 5/15 Table 5. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 15V, ID = 30A, RG = 4.7Ω, VGS = 10V Figure 13 on page 8 16 95 48 23 47 ns ns ns ns Table 6. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 60 A ISDM Source-drain current (pulsed) 240 A VSD (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD = 30A, VGS = 0 1.4 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 60A, di/dt = 100A/µs, VDD = 15V, TJ = 150°C Figure 15 on page 8 46 64 2.8 ns µC A |
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