STD888T4 datasheet(4/10 Pages) STMICROELECTRONICS

No. de pieza	STD888T4

Descripción Electrónicos	Medium Current, High Performance, Low Voltage PNP Transistor

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STD888T4

4/10

2

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Note (2) Pulsed duration = 300

µs, duty cycle ≤1.5%

Table 3.

Electrical characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE =0)

VCB = -30V

VCB = -30V;

TC = 100°C

-10

100

µA

IEBO

Emitter cut-off current

(IC =0)

VEB = -6V

-10

µA

V(BR)CEO (2)

Collector-emitter

breakdown voltage

(IB =0)

IC = -10mA

-30

V

V(BR)CBO

Collector-base

breakdown voltage

(IE =0)

IC = -100µA

-45

V

V(BR)EBO

Emitter-base breakdown

voltage (IC =0)

IE = -100µA

-6

V

VCE(sat) (2) Collector-emitter

saturation voltage

IC = -0.5A

IB = -5mA

IC = -2A

IB = -50mA

IC = -5A

IB = -250mA

IC = -6A

IB = -250mA

IC = -8A

IB = -400mA

IC = -10A

IB = -500mA

-0.7

-1

-1.2

-0.15

-0.35

-0.7

V

VBE(sat) (2)

Base-emitter saturation

voltage

IC = -2A

IB = -50mA

IC = -6A

IB = -250mA

-1.2

-1.1

V

hFE (2)

DC current gain

IC = -10mA

VCE = -1V

IC = -500mA VCE = -1V

IC = -5A

VCE = -1V

IC = -5A

VCE = -1V

TC = 100°C

IC = -8A

VCE = -1V

IC = -10A

VCE = -1V

120

100

70

200

100

55

35

300

td

tr

ts

tf

Resistive load

Delay time

Rise time

Storage time

Fall time

IC = -3A

VCC = -20V

IB1 = -IB2 = -60mA

(see figure 7)

180

160

250

80

220

210

300

100

ns

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