Philips Semiconductors

Product Specification

PowerMOS transistor

BUK545-60A/B

Logic level FET

GENERAL DESCRIPTION

QUICK REFERENCE DATA

N-channel enhancement mode

SYMBOL

PARAMETER

MAX.

MAX.

UNIT

logic level field-effect power

transistor in a plastic full-pack

BUK545

-60A

-60B

envelope.

V

DS

Drain-source voltage

60

60

V

The device is intended for use in

I

D

Drain current (DC)

20

18

A

Switched Mode Power Supplies

P

tot

Total power dissipation

30

30

W

(SMPS), motor control, welding,

T

j

Junction temperature

150

150

˚C

DC/DC and AC/DC converters, and

R

DS(ON)

Drain-source on-state

0.042

0.055

Ω

in automotive and general purpose

resistance;

V

switching applications.

PINNING - SOT186

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

gate

2

drain

3

source

case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

DS

Drain-source voltage

-

-

60

V

V

DGR

Drain-gate voltage

R

-60

V

±V

GS

Gate-source voltage

-

-

15

V

±V

GSM

Non-repetitive gate-source voltage t

-

20

V

-60A

-60B

I

D

Drain current (DC)

T

25 ˚C

-

20

18

A

I

D

Drain current (DC)

T

-

13

11

A

I

DM

Drain current (pulse peak value)

T

25 ˚C

-

80

72

A

P

tot

Total power dissipation

T

25 ˚C

-

30

W

T

stg

Storage temperature

-

- 55

150

˚C

T

j

Junction Temperature

-

-

150

˚C

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

R

th j-hs

Thermal resistance junction to

with heatsink compound

-

-

4.17

K/W

heatsink

R

th j-a

Thermal resistance junction to

-

55

-

K/W

ambient

12 3

case

d

g

s

April 1993

1

Rev 1.100