© Semiconductor Components Industries, LLC, 2003

September, 2003 − Rev. 0

Publication Order Number:

EMA6DXV5T1/D

1

EMA6DXV5T1,

EMA6DXV5T5

Preferred Devices

Dual Common Emitter Bias

Resistor Transistor

PNP Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base−emitter

resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space. The device is housed in the

SOT−553 package which is designed for low power surface mount

applications.

− Machine Model: Class B

Rating

Symbol

Value

Unit

Collector-Base Voltage

50

Vdc

Collector-Emitter Voltage

50

Vdc

Collector Current

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

Derate above 25

°C

230 (Note 1)

338 (Note 2)

1.8 (Note 1)

2.7 (Note 2)

mW

°C/W

Thermal Resistance −

Junction-to-Ambient

540 (Note 1)

370 (Note 2)

°C/W

Thermal Resistance −

Junction-to-Lead

264 (Note 1)

287 (Note 2)

°C/W

Junction and Storage

Temperature Range

− 55 to +150

°C

DEVICE MARKING AND RESISTOR VALUES

Device

Marking

R1 (K)

R2 (K)

EMA6DXV5T1

UD

47

∞

1. FR−4 @ Minimum Pad

2. FR−4 @ 1.0 x 1.0 inch Pad

UD M

Preferred devices are recommended choices for future use

and best overall value.

UD= Specific Device Code

M = Date Code

PNP SILICON

BIAS RESISTOR

TRANSISTOR

http://onsemi.com

R2

R1

MARKING DIAGRAM

SOT−553

CASE 463B

1

5

1

5

Device

Package

Shipping

ORDERING INFORMATION

EMA6DXV5T1

SOT−553

4 mm pitch

4000/Tape & Reel

EMA6DXV5T5

SOT−553

2 mm pitch

8000/Tape & Reel

(3)

(2)

(1)

(4)

(5) / (6)

EMA6 / UMA6N