HN1B01FDW1T1 datasheet(4/6 Pages) ONSEMI | Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount

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Descripción

HN1B01FDW1T1

Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount ( 6 Page)

ONSEMI

4 page

HN1B01FDW1T1

http://onsemi.com

Typical Electrical Characteristics: NPN Transistor

Figure 7. Collector Saturation Voltage

280

VCE, COLLECTOR−EMITTER VOLTAGE (V)

120

160

Figure 8. DC Current Gain

100

1000

IC, COLLECTOR CURRENT (mA)

100

TA = 25°C

6.0 mA

1.0 mA

IB = 0.2 mA

VCE = 1.0 V

TA = 100°C

−25

°C

Figure 9. DC Current Gain

1000

100

1000

IC, COLLECTOR CURRENT (mA)

100

Figure 10. VCE(sat) versus IC

100

1000

0.01

IC, COLLECTOR CURRENT (mA)

0.1

IC/IB = 10

TA = 100°C

−25

°C

TA = 100°C

−25

°C

Figure 11. VBE(sat) versus IC

1000

100

0.1

IC, COLLECTOR CURRENT (mA)

Figure 12. Base−Emitter Voltage

0.1

10,000

VBE, BASE−EMITTER VOLTAGE (V)

0.1

COMMON EMITTER

VCE = 6 V

TA = 100°C

−25

°C

TA = 25°C

IC/IB = 10

100

1000

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

5.0 mA

3.0 mA

200

240

2.0 mA

0.5 mA

VCE = 6.0 V

1 2 3 4 5 6

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