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J111RLRAG Datasheet(PDF) 4 Page - ON Semiconductor |
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J111RLRAG Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 5 page J111, J112 http://onsemi.com 4 NOTE 2 The Zero−Gate−Voltage Drain Current (IDSS), is the principle determinant of other J-FET characteristics. Figure 10 shows the relationship of Gate−Source Off Voltage (VGS(off) and Drain−Source On Resistance (rds(on)) to IDSS. Most of the devices will be within ±10% of the values shown in Figure 10. This data will be useful in predicting the characteristic variations for a given part number. For example: Unknown rds(on) and VGS range for an J112 The electrical characteristics table indicates that an J112 has an IDSS range of 25 to 75 mA. Figure 10, shows rds(on) = 52 W for IDSS = 25 mA and 30 W for IDSS = 75 mA. The corresponding VGS values are 2.2 V and 4.8 V. 2.0 3.0 5.0 7.0 10 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 ID, DRAIN CURRENT (mA) Figure 6. Typical Forward Transfer Admittance 1.0 1.5 2.0 3.0 5.0 7.0 10 15 0.03 0.05 0.1 0.3 0.5 1.0 3.0 5.0 10 30 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Typical Capacitance 200 160 120 80 40 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE−SOURCE VOLTAGE (VOLTS) Figure 8. Effect of Gate−Source Voltage On Drain−Source Resistance 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 −70 −40 −10 20 50 80 110 140 170 Tchannel, CHANNEL TEMPERATURE (°C) Figure 9. Effect of Temperature On Drain−Source On−State Resistance J113 J112 J111 Tchannel = 25°C VDS = 15 V Cgs Cgd Tchannel = 25°C (Cds IS NEGLIGIBLE) IDSS = 10 mA 25 mA 50mA 75mA 100mA 125mA Tchannel = 25°C ID = 1.0 mA VGS = 0 10 IDSS, ZERO−GATE−VOLTAGE DRAIN CURRENT (mA) Figure 10. Effect of IDSS On Drain−Source Resistance and Gate−Source Voltage 20 30 40 50 60 70 80 90 100 110 120 130 140 150 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 100 90 80 70 60 50 40 30 20 10 0 Tchannel = 25°C rDS(on) @ VGS = 0 VGS(off) |
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