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BDX33B Datasheet(PDF) 1 Page - ON Semiconductor |
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BDX33B Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 11 1 Publication Order Number: BDX33B/D BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0 • Collector−Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min) − BDX33B, BDX334B = 100 Vdc (min) − BDX33C, BDX334C • Low Collector−Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc − BDX33B, 33C/34B, 34C • Monolithic Construction with Build−In Base−Emitter Shunt Resistors • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage BDX33B, BDX34B BDX33C, BDX34C VCEO 80 100 Vdc Collector−Base Voltage BDX33B, BDX34B BDX33C, BDX34C VCB 80 100 Vdc Emitter−Base Voltage VEB 5.0 Vdc Collector Current − Continuous − Peak IC 10 15 Adc Base Current IB 0.25 Adc Total Device Dissipation @ TC = 25_C Derate above 25 °C PD 70 0.56 W W/ _C Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 _C THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.78 _C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DARLINGTON 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80−100 VOLTS, 65 WATTS TO−220AB CASE 221A−09 STYLE 1 1 http://onsemi.com MARKING DIAGRAM BDX3xy = Device Code x = 3 or 4 y = B or C A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package 2 3 BDX3xyG AY WW See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ORDERING INFORMATION Preferred devices are recommended choices for future use and best overall value. |
Número de pieza similar - BDX33B |
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Descripción similar - BDX33B |
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