MBT6429DW1T1_05 datasheet(4/5 Pages) ONSEMI | Amplifier Transistors NPN Silicon

Nombre de pieza

Descripción

MBT6429DW1T1_05

Amplifier Transistors NPN Silicon ( 5 Page)

ONSEMI

4 page

MBT6429DW1T1

http://onsemi.com

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (mA)

0.4

1.0

2.0

3.0

4.0

0.3

0.01

0.05

2.0

3.0

0.02

0.03

0.2

1.0

0.1

5.0

VCE = 5.0 V

TA = 125°C

25°C

−55 °C

0.7

0.5

0.2

0.3

0.01 0.02 0.05 0.1 0.2

0.5 1.0 2.0 5.0

10 20

50 100

Figure 9. “On” Voltages

IC, COLLECTOR CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

Figure 10. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

0.01

−0.8

−1.2

−1.6

−2.4

TJ = 25°C

VCE(sat) @ IC/IB = 10

VBE @ VCE = 5.0 V

TJ = 25°C to 125°C

−55 °C to 25°C

−0.4

−2.0

0.02 0.05 0.1 0.2

0.5 1.0 2.0 5.0

10 20

100

8.0

0.8

1.0

2.0

3.0

4.0

6.0

0.1

0.2

0.5

1.0

2.0

5.0

100

TJ = 25°C

Ccb

Cob

Ceb

Cib

1.0

2.0

5.0

3.0

7.0

50 70 100

500

300

200

100

VCE = 5.0 V

TJ = 25°C

Figure 11. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

Figure 12. Current−Gain − Bandwidth Product

IC, COLLECTOR CURRENT (mA)

1 2 3 4 5

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