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BUK7520-55 Datasheet(PDF) 1 Page - NXP Semiconductors |
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BUK7520-55 Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 8 page Philips Semiconductors Product specification TrenchMOS ™ transistor BUK7520-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using V DS Drain-source voltage 55 V ’trench’ technology. The device I D Drain current (DC) 52 A features very low on-state resistance P tot Total power dissipation 116 W and has integral zener diodes giving T j Junction temperature 175 ˚C ESD protection up to 2kV. It is R DS(ON) Drain-source on-state 20 m Ω intended for use in automotive and resistance V GS = 10 V general purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 gate 2 drain 3 source tab drain LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS Drain-source voltage - - 55 V V DGR Drain-gate voltage R GS = 20 kΩ -55 V ±V GS Gate-source voltage - - 16 V I D Drain current (DC) T mb = 25 ˚C - 52 A I D Drain current (DC) T mb = 100 ˚C - 37 A I DM Drain current (pulse peak value) T mb = 25 ˚C - 208 A P tot Total power dissipation T mb = 25 ˚C - 116 W T stg, Tj Storage & operating temperature - - 55 175 ˚C ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V C Electrostatic discharge capacitor Human body model - 2 kV voltage, all pins (100 pF, 1.5 k Ω) THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-mb Thermal resistance junction to - - 1.29 K/W mounting base R th j-a Thermal resistance junction to in free air 60 - K/W ambient d g s 12 3 tab April 1998 1 Rev 1.100 |
Número de pieza similar - BUK7520-55 |
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Descripción similar - BUK7520-55 |
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