MJD112_06 datasheet(4/8 Pages) ONSEMI

No. de pieza	MJD112

Descripción Electrónicos	Complementary Darlington Power Transistors

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MJD112 (NPN) MJD117 (PNP)

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IC, COLLECTOR CURRENT (AMP)

NPN MJD112

PNP MJD117

Figure 7. DC Current Gain

Figure 8. Collector Saturation Region

Figure 9. “On Voltages

0.04

IC, COLLECTOR CURRENT (AMP)

300

0.06

0.2

2 k

800

4 k

VCE = 3 V

TJ = 125°C

3 k

0.1

0.6

25

°C

−55

°C

1 k

0.4

1

6 k

400

600

2

4

0.04

300

0.06

0.2

2 k

800

4 k

3 k

0.1

0.6

25

°C

−55

°C

1 k

0.4

1

6 k

400

600

24

3.4

IB, BASE CURRENT (mA)

2.6

2.2

1.8

1.4

0.6

0.1

0.2

0.5

10

25

IC =

0.5 A

1 A

1

3

1

0.04

IC, COLLECTOR CURRENT (AMP)

1.4

1

2.2

1.8

0.6

0.2

TJ = 25°C

VBE(sat) @ IC/IB = 250

VBE @ VCE = 3 V

VCE(sat) @ IC/IB = 250

0.06

0.2

2

0.1

0.6

0.4

1

4

0.04

IC, COLLECTOR CURRENT (AMP)

1.4

1

2.2

1.8

0.6

0.2

TJ = 25°C

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

0.06

0.2

2

0.1

0.6

0.4

1

4

20

50

100

3.4

IB, BASE CURRENT (mA)

2.6

2.2

1.8

1.4

0.6

0.1

0.2

0.5

10

25

1

3

1

20

50

100

VBE @ VCE = 3 V

TC = 125°C

VCE = 3 V

4 A

TJ = 125°C

2 A

TJ = 125°C

IC =

0.5 A

1 A

4 A

2 A

TYPICAL ELECTRICAL CHARACTERISTICS

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