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| MKP1V120_06 |
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ONSEMI |
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4 page
MKP1V120 Series http://onsemi.com 4 THERMAL CHARACTERISTICS Figure 5. Thermal Response t, TIME (ms) 10 0.1 0.07 0.03 0.02 0.01 5.0 0.2 0.5 1.0 2.0 0.05 0.1 0.2 0.3 0.5 0.7 1.0 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k The temperature of the lead should be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady−state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: TJ = TL + DTJL ZqJL(t) = RqJL • r(t) DTJL = Ppk RqJL[r(t)] where: DTJL = the increase in junction temperature above the lead temperature r(t) = normalized value of transient thermal resistance at time, t from this figure. For example, r(tp) = normalized value of transient resistance at time tp. TIME tp Figure 6. Typical Breakover Voltage Figure 7. Typical Holding Current Figure 8. Pulse Rating Curve TJ, JUNCTION TEMPERATURE (°C) −60 0.8 0.4 100 0.1 tw, PULSE WIDTH (ms) 100 10 1.0 −40 −20 100 140 0.6 1.0 1.2 10 TJ, JUNCTION TEMPERATURE (°C) 100 −60 0.9 0.8 40 −40 −20 0 20 1.0 1.4 1.0 80 60 120 140 120 80 060 40 20 10% tw IPK |
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