2N3055 datasheet(2/2 Pages) UTC | SILICON NPN TRANSISTORS

2 page

UTC2N3055

SILICON NPN TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO. LTD

QW-R205-003,A

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Base-Emitter On Voltage

VBE(on)

Ic=4A,VCE=4V

1.5

SECOND BREAKDOWN

Second Breakdown Collector with

Base Forward Biased

Is/b

VCE=60V,T=1.0s, Non-repetitive 2.87

DYNAMIC CHARACTERISTICS

Current Gain-Bandwidth Product

Ic=0.5A,VCE=10V,f=1MHz

2.5

MHz

Small-Signal Current Gain

hFE

Ic=1A,VCE=4V,f=1kHz

120

Small-Signal Current Gain

Cut-off Frequency

fHFE

Ic=1A,VCE=4V

F=1.0kHz

kHz

Note(1):Pulse Test: Puls Width<=300

µs, Duty Cycle<=2%

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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