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UTC2N3055 SILICON NPN TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R205-003,A SILICON NPN TRANSISTORS The UTC 2N3055 is a silicon NPN transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETERS SYMBOL VALUE UNITS Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 7 V Collector-Emitter Voltage VCEV 70 V Collector Current Ic 15 A Collector Peak Current(1) ICM 15 A Base Current IB 7 A Base Peak Current(1) IBM 15 A Total Dissipation at Ta=25 °C Ptot 115 W Storage Temperature TSTG -65 to 200 °C Max. Operating Junction Temperature Tj 200 °C ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage VCEO(sus) Ic=200mA, IB=0V 60 V Collector-Emitter Sustaining Voltage VCER(sus) Ic=0.2 A, RBE=100 Ohms 70 V Collector Cut-off Current ICEO VCE=30V,IB=0 0.7 mA Collector Cut-off Current ICEX VCE=100V,VBE(off)=1.5V. VCE=100V,VBE(off)=1.5V, Ta=150 °C 1.0 5.0 mA Emitter Cut-off Current IEBO VBE=7V,IC=0 5.0 mA ON CHARACTERISTICS DC Current Gain(note) hFE Ic=4A,VCE=4V, Ic=10A,VCE=4V 20 5 70 Collector-Emitter Saturation Voltage VCE(sat) Ic=4A,IB=400mA Ic=10A,IB=3.3A 1.1 3.0 V |
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