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UTC2SC3669 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R213-006,B hFE -Ic Collector Current Ic (A) 0.01 0.03 0.1 10 30 50 0.3 100 300 1 500 2 Common Emitter VCE=2V Ta=100℃ Ta=25℃ Ta=-55℃ VCE(sat) -Ic Collector Current Ic (A) 0.01 0.03 0.1 0.01 0.03 0.05 0.3 0.1 0.3 1 0.5 Common Emitter Ic/IB=20 Ta=100℃ Ta=25℃ Ta=-55℃ 0.05 0.5 2 VBE(sat) -Ic Collector Current, Ic (A) 0.01 0.03 0.1 0.1 0.3 0.5 0.3 1 1 3 Common Emitter Ic/IB=20 Ta=100℃ Ta=25℃ Ta=-55℃ 0.05 0.5 Ic-VBE Base -Emitter Voltage, VBE(V) 0 0.4 0.8 1.2 0 0.4 0.8 1.2 1.6 1.6 2.0 1.0 Common Emitter VCE=2 V 0.6 0.2 Ta=-55℃ Ta=100℃ Ta=25℃ UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. |
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