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UTC2SC3669 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R213-006,B POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES *Low saturation voltage VCE(sat)= 0.5V(Max) *High speed switching time: tstg=1.0μS(Typ.) TO-251 1 1:BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS ( Ta=25°C) PARAMETER SYMBOL LIMITS UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5 V Collector Current Ic 2 A Base Current IB 1 A Collector Power Dissipation Pc 1 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55 ~ +150 °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Emitter Breakdown Voltage V(BR)CEO Ic= 10mA, IB= 0 80 V Collector Cut-Off Current ICBO VCB=80V, IE= 0 1.0 μ A Emitter Cut-Off Current IEBO VEB= 5V, Ic=0 1.0 μ A hFE1 VCE=2V, Ic=0.5A 70 240 DC Current Gain hFE2 VCE=2V, Ic=1.5A 40 Collector-Emitter Saturation Voltage VCE(sat) Ic=1A, IB=0.05A 0.15 0.5 V Base- Emitter Saturation Voltage VBE(sat) Ic=1A, IB=0.05A 0.9 1.2 V Transition Frequency fT VCE=2V, Ic=0.5A 100 MHz Collector Output Capacitance Cob VCB= 10V, IE= 0, f=1MHz 30 pF |
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