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M74VHC1GT86DFT1G Datasheet(PDF) 3 Page - ON Semiconductor |
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M74VHC1GT86DFT1G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 6 page MC74VHC1GT86 http://onsemi.com 3 DC ELECTRICAL CHARACTERISTICS VCC TA = 25°C TA ≤ 85°C −55 ≤ TA ≤ 125°C Symbol Parameter Test Conditions (V) Min Typ Max Min Max Min Max Unit VIH Minimum High−Level Input Voltage 3.0 4.5 5.5 1.4 2.0 2.0 1.4 2.0 2.0 1.4 2.0 2.0 V VIL Maximum Low−Level Input Voltage 3.0 4.5 5.5 0.53 0.8 0.8 0.53 0.8 0.8 0.53 0.8 0.8 V VOH Minimum High−Level Output Voltage VIN = VIH or VIL VIN = VIH or VIL IOH = −50 mA 3.0 4.5 2.9 4.4 3.0 4.5 2.9 4.4 2.9 4.4 V VIN = VIH or VIL IOH = −4 mA IOH = −8 mA 3.0 4.5 2.58 3.94 2.48 3.80 2.34 3.66 V VOL Maximum Low−Level Output Voltage VIN = VIH or VIL VIN = VIH or VIL IOL = 50 mA 3.0 4.5 0.0 0.0 0.1 0.1 0.1 0.1 0.1 0.1 V VIN = VIH or VIL IOL = 4 mA IOL = 8 mA 3.0 4.5 0.36 0.36 0.44 0.44 0.52 0.52 V IIN Maximum Input Leakage Current VIN = 5.5 V or GND 0 to 5.5 ±0.1 ±1.0 ±1.0 mA ICC Maximum Quiescent Supply Current VIN = VCC or GND 5.5 1.0 20 40 mA ICCT Quiescent Supply Current Input: VIN = 3.4 V 5.5 1.35 1.50 1.65 mA IOPD Output Leakage Current VOUT = 5.5 V 0.0 0.5 5.0 10 mA AC ELECTRICAL CHARACTERISTICS Cload = 50 pF, Input tr = tf = 3.0 ns Symbol Parameter Test Conditions TA = 25°C TA ≤ 85°C −55 ≤ TA ≤ 125°C Unit Min Typ Max Min Max Min Max tPLH, tPHL Maximum Propagation Delay, Input A or B to Y VCC = 3.3 ± 0.3 VCL = 15 pF CL = 50 pF 5.0 6.2 11.0 14.5 13.0 16.5 15.5 19.5 ns VCC = 5.0 ± 0.5 VCL = 15 pF CL = 50 pF 3.1 4.2 6.8 8.8 8.0 10.0 10.0 12.0 CIN Maximum Input Capacitance 5.5 10 10 10 pF Typical @ 25 °C, VCC = 5.0 V CPD Power Dissipation Capacitance (Note 6) 11 pF 6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. |
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