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UTC BC337/338 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R201-039,B PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Base-emitter on voltage VBE(on) VCE=1V, Ic=300mA 1.2 V Current gain bandwidth product fT VCE=5V, Ic=10mA, f=50MHz 100 MHz Output Capacitance Cob VCB=10V, IE=0, f=1MHz 12 pF CLASSIFICATION OF hFE1 RANK 16 25 40 hFE1 100-250 160-400 250-630 |
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