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UTC BC337/338 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-039,B SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC327/328 TO-92 1 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector-emitter voltage : BC337 : BC338 VCES 50 30 V V Collector-emitter voltage : BC337 : BC338 VCEO 45 25 V V Emitter-base voltage VEBO 5 V Collector current (DC) Ic 800 mA Collector dissipation Pc 625 mW Junction Temperature Tj 150 °C Storage Temperature TSTG -55 ~ +150 °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-emitter breakdown voltage : BC337 : BC338 BVCEO Ic=10mA, IB=0 45 25 V V Collector-emitter breakdown voltage : BC337 : BC338 BVCES Ic=0.1mA, VBE=0 50 30 V V Emitter-base breakdown voltage BVEBO IE=0.1mA, Ic=0 5 V Collector Cut-off Current : BC337 : BC338 ICES VCE=45V, IB=0 VCE=25V, IB=0 2 2 100 100 nA nA DC current gain hFE1 hFE2 VCE=1V, Ic=100mA VCE=1V, Ic=300mA 100 60 630 Collector-emitter saturation voltage VCE(sat) Ic=500mA, IB=50mA 0.7 V |
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