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UTC BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-037,A SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * High Voltage: BC546, VCEO=65V TO-92 1 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector-base voltage : BC546 : BC547 : BC548 VCBO 80 50 30 V V V Collector-emitter voltage : BC546 : BC547 : BC548 VCEO 65 45 30 V V V Emitter-base voltage : BC546 : BC547 : BC548 VEBO 6 6 5 V V V Collector current (DC) Ic 100 mA Collector dissipation Pc 500 mW Junction Temperature Tj 150 °C Storage Temperature TSTG -65 ~ +150 °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Cut-off Current ICBO VCB=30V, IE=0 15 nA DC current gain hFE VCE=5V, Ic=2mA 110 800 Collector-emitter saturation voltage VCE(sat) Ic=10mA, IB=0.5mA Ic=100mA, IB=5mA 90 200 250 600 mV mV Base-emitter saturation voltage VBE(sat) Ic=10mA, IB=0.5mA Ic=100mA, IB=5mA 700 900 mV Base-emitter on voltage VBE(on) VCE=5V, Ic=2mA VCE=5V, Ic=10mA 580 660 700 720 mV mV |
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