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BD139 Datasheet(PDF) 2 Page - Unisonic Technologies |
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BD139 Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 2 page UTC BD139 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R204-007,A ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise specified) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT IE=0, VCB=30V - 100 nA Collector cut-off current ICBO IE=0, VCB=30V,Tj=125°C - 10 μ A Emitter cut-off current IEBO IC=0, VEB=5V - 100 nA DC current gain VCE=2V (See Fig.2) Ic=5mA Ic=150mA Ic=500mA 40 63 25 - - - - 250 - DC current gain BD139-10 BD139-16 hFE Ic=150mA, VCE=2V (See Fig.1) 63 100 - - 160 250 Collector-emitter saturation voltage VCE(sat) Ic=500 mA, IB=50mA - - 0.5 V Base-emitter voltage VBE Ic=500 mA, VCE=2V - - 1 V Transition frequency fT Ic=500 mA, VCE=5V, f=100MHz - 190 - MHz 10 1 10-1 103 102 0 160 120 80 40 IC(mA) hFE VCE=2V Fig.1 DC current gain;typical values. UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. |
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