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PZT5551L-B-AA3-E-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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PZT5551L-B-AA3-E-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 4 page PZT5551 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 4 www.unisonic.com.tw QW-R207-007,D ABSOLUATE MAXIUM RATINGS (Ta = 25℃) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V DC Collector Current IC 600 mA Power Dissipation PC 2 W Operating Junction Temperature TJ +150 ℃ Storage Temperature TSTG -65 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Thermal Resistance θJA 62.5 ℃ /W ELECTRICAL CHARACTERISTICS (Ta= 25 , ℃ unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=100μA, IE=0 180 V Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 160 V Emitter-Base Breakdown Voltage BVEBO IE=10μA, IC=0 6 V Collector Cut-off Current ICBO VCB=120V, IE=0 50 nA Emitter Cut-off Current IEBO VBE=4V, Ic=0 50 nA DC Current Gain(note) hFE VCE=5V, Ic=1mA VCE=5V, Ic=10mA VCE=5V, Ic=50mA 80 80 80 160 400 IC=10mA, IB=1mA 0.15 Collector-Emitter Saturation Voltage VCE(SAT) IC=50mA, IB=5mA 0.2 V Base-Emitter Saturation Voltage VBE(SAT) IC=10mA, IB=1mA IC=50mA, IB=5mA 1 1 V Current Gain Bandwidth Product fT VCE=10V, Ic=10mA, f=100MHz 100 300 MHz Output Capacitance Cob VCB=10V, IE=0, f=1MHz 6.0 pF Noise Figure NF IC=0.25mA, VCE=5V RS=1kΩ, f=10Hz ~ 15.7kHz 8 dB Note: Pulse test: PW<300 μs, Duty Cycle<2% CLASSIFICATION OF hFE RANK A B C RANGE 80-170 150-240 200-400 |
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