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MC100EPT24D Datasheet(PDF) 3 Page - ON Semiconductor

No. de pieza MC100EPT24D
Descripción Electrónicos  3.3V LVTTL/LVCMOS to Differential LVECL Translator
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC100EPT24D Datasheet(HTML) 3 Page - ON Semiconductor

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MC100EPT24
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3
Table 3. MAXIMUM RATINGS
Symbol
Parameter
Condition 1
Condition 2
Rating
Unit
VCC
Positive Power Supply
GND = 0 V
VEE = −3.3V
3.8
V
VEE
Negative Power Supply
GND = 0 V
VCC = 3.3V
−3.8
V
VIN
Input Voltage
GND = 0 V
VI v VCC
0 to VCC
V
Iout
Output Current
Continuous
Surge
50
100
mA
mA
TA
Operating Temperature Range
−40 to +85
°C
Tstg
Storage Temperature Range
−65 to +150
°C
qJA
Thermal Resistance (Junction−to−Ambient)
0 lfpm
500 lfpm
SOIC−8
SOIC−8
190
130
°C/W
°C/W
qJC
Thermal Resistance (Junction−to−Case)
Standard Board
SOIC−8
41 to 44
°C/W
qJA
Thermal Resistance (Junction−to−Ambient)
0 lfpm
500 lfpm
TSSOP−8
TSSOP−8
185
140
°C/W
°C/W
qJC
Thermal Resistance (Junction−to−Case)
Standard Board
TSSOP−8
41 to 44
°C/W
qJA
Thermal Resistance (Junction−to−Ambient)
0 lfpm
500 lfpm
DFN8
DFN8
129
84
°C/W
°C/W
Tsol
Wave Solder
Pb
Pb−Free
265
265
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 4. LVTTL INPUT DC CHARACTERISTICS VCC = 3.3 V, VEE = −3.6 V to −3.0 V, GND = 0.0 V; TA = −40°C to 85°C
Symbol
Characteristic
Condition
Min
Typ
Max
Unit
IIH
Input HIGH Current
VIN = 2.7 V
20
mA
IIHH
Input HIGH Current HIGH Voltage
VCC = VIN = 3.8 V
100
mA
IIL
Input LOW Current
VIN = 0.5 V
−0.6
mA
VIK
Input Clamp Voltage
IIN = −18 mA
−1.0
V
VIH
Input HIGH Voltage
2.0
V
VIL
Input LOW Voltage
0.8
V
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
Table 5. NECL OUTPUT DC CHARACTERISTICS VCC = 3.3 V, VEE = −3.3 V, GND = 0.0 V (Note 2)
Symbol
Characteristic
−40°C
25°C
85°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
VOH
Output HIGH Voltage (Note 3)
-1145
−1020
-895
-1145
−1020
-895
-1145
−1030
-895
mV
VOL
Output LOW Voltage (Note 3)
-1945
−1820 -1695
-1945
−1820 -1695
-1945
−1820 -1695
mV
ICC
Positive Power Supply Current
2.0
4.0
2.0
4.0
2.0
4.0
mA
IEE
Negative Power Supply Current
20
30
38
20
30
38
20
30
38
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
2. Output levels will vary 1:1 with GND. VEE can vary ± 0.3 V.
3. Outputs are terminated through a 50 W resistor to GND − 2 V.


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