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CAT25C17AXI-20T Datasheet(PDF) 1 Page - Catalyst Semiconductor |
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CAT25C17AXI-20T Datasheet(HTML) 1 Page - Catalyst Semiconductor |
1 / 10 page 1 CAT28C17A 16K-Bit CMOS PARALLEL EEPROM FEATURES ■ Fast Read Access Times: 200 ns ■ Low Power CMOS Dissipation: –Active: 25 mA Max. –Standby: 100 µA Max. ■ Simple Write Operation: –On-Chip Address and Data Latches –Self-Timed Write Cycle with Auto-Clear ■ Fast Write Cycle Time: 10ms Max ■ End of Write Detection: – DATA DATA DATA DATA DATA Polling –RDY/ BSY BSY BSY BSY BSY Pin ■ Hardware Write Protection ■ CMOS and TTL Compatible I/O ■ 10,000 Program/Erase Cycles ■ 10 Year Data Retention ■ Commercial,Industrial and Automotive Temperature Ranges DESCRIPTION The CAT28C17A is a fast, low power, 5V-only CMOS parallel EEPROM organized as 2K x 8-bits. It requires a simple interface for in-system programming. On-chip address and data latches, self-timed write cycle with auto-clear and VCC power up/down write protection eliminate additional timing and protection hardware. DATA Polling and a RDY/BSY pin signal the start and end of the self-timed write cycle. Additionally, the CAT28C17A features hardware write protection. The CAT28C17A is manufactured using Catalyst’s ad- vanced CMOS floating gate technology. It is designed to endure 10,000 program/erase cycles and has a data retention of 10 years. The device is available in JEDEC approved 28-pin DIP and SOIC or 32-pin PLCC pack- ages. BLOCK DIAGRAM ADDR. BUFFER & LATCHES ADDR. BUFFER & LATCHES INADVERTENT WRITE PROTECTION CONTROL LOGIC TIMER ROW DECODER COLUMN DECODER HIGH VOLTAGE GENERATOR A4–A10 CE OE WE A0–A3 I/O0–I/O7 I/O BUFFERS 2,048 x 8 EEPROM ARRAY VCC DATA POLLING & RDY/BUSY RDY/BUSY © 2004 by Catalyst Semiconductor, Inc. Characteristics subject to change without notice Doc. No. 1075, Rev. B ALO GEN FR TM LEAD FREE |
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