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FCD4N60TF Datasheet(PDF) 4 Page - Fairchild Semiconductor

No. de pieza FCD4N60TF
Descripción Electrónicos  600V N-Channel MOSFET
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Fabricante Electrónico  FAIRCHILD [Fairchild Semiconductor]
Página de inicio  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FCD4N60TF Datasheet(HTML) 4 Page - Fairchild Semiconductor

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FCD4N60 Rev. B
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs. Temperature
vs. Temperature
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
*Notes :
1. V
GS = 0 V
2. I
D = 250μA
T
J, Junction Temperature [
οC]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
*Notes :
1. V
GS = 10 V
2. I
D = 2.0 A
T
J, Junction Temperature [
oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
25
50
75
100
125
150
0
1
2
3
4
T
C, Case Temperature [
oC]
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10 us
Operation in This Area
is Limited by R
DS(on)
DC
10 ms
1 ms
100 us
* Notes :
1. T
C = 25
oC
2. T
J = 150
oC
3. Single Pulse
V
DS, Drain-Source Voltage [V]
vs. Case Temperature
Figure 11-1. Transient Thermal Response Curve
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
* N ote s :
1. Z
θ JC (t ) = 2 .5
oC/W Max.
2. D uty F actor, D = t
1 /t2
3. T
JM - T C = P DM * Z θJC (t)
single pu lse
D= 0.5
0.02
0.2
0.05
0.1
0.01
t
1, S q u ar e W av e P u ls e D u r at ion [ s ec ]
t1
PDM
t2


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