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BYC10B-600 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BYC10B-600 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 6 page Philips Semiconductors Product specification Rectifier diode BYC10B-600 ultrafast, low switching loss Fig.9. Definition of reverse recovery parameters t rr, Irrm Fig.10. Typical forward recovery voltage, V fr as a function of rate of change of current dI F/dt. Fig.11. Definition of forward recovery voltage V fr Fig.12. Typical and maximum forward characteristic I F = f(VF); Tj = 25˚C and 150˚C. Fig.13. Typical reverse leakage current as a function of reverse voltage. I R = f(VR); parameter Tj Fig.14. Maximum thermal impedance Z th j-mb as a function of pulse width. Q s 100% 10% time dI dt F I R I F I rrm t rr 012 34 0 5 10 15 20 BYC10-600 Forward voltage, VF (V) Forward current, IF (A) max typ Tj = 25 C Tj = 150 C 0 50 100 150 200 0 5 10 15 20 BYC10-600 Tj = 25 C Rate of change of current, dIF/dt (A/ s) Peak forward recovery voltage, Vfr (V) typ IF = 10 A 0 100 200 300 400 500 600 BYC10-600 1uA 10uA 100uA 1mA 10mA 100mA Reverse leakage current (A) Reverse voltage (V) Tj = 125 C 100 C 75 C 50 C 25 C time time V F V fr V F I F 1us 10us 100us 1ms 10ms 100ms 1s 10s 0.001 0.01 0.1 1 10 BYV79E pulse width, tp (s) Transient thermal impedance, Zth j-mb (K/W) D = tp tp T T P t D September 1998 4 Rev 1.100 |
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