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4N31 Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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4N31 Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 13 page ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com 4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1 3 Electrical Characteristics (TA = 25°C Unless otherwise specified.) Individual Component Characteristics Transfer Characteristics Isolation Characteristics Notes: * Indicates JEDEC registered data. 1. The current transfer ratio(IC/IF) is the ratio of the detector collector current to the LED input current with VCE @ 10V. 2. Pulse test: pulse width = 300µs, duty cycle ≤ 2.0% . 4. IF adjusted to IC = 2.0mA and IC = 0.7mA rms. 5. The frequency at which IC is 3dB down from the 1kHz value. 6. For this test, LED pins 1 and 2 are common, and phototransistor pins 4, 5 and 6 are common. Symbol Parameter Test Conditions Min. Typ. Max. Unit EMITTER VF Input Forward Voltage* IF = 10mA – 1.2 1.5 V IR Reverse Leakage Current* VR = 3.0V – 0.001 100 µA C Capacitance* VF = 0V, f = 1.0MHz – 150 – pF DETECTOR BVCEO Collector-Emitter Breakdown Voltage* IC = 1.0mA, IB = 0 30 60 – V BVCBO Collector-Base Breakdown Voltage* IC = 100µA, IE = 0 30 100 – V BVECO Emitter-Collector Breakdown Voltage* IE = 100µA, IB = 0 5.0 8 – V ICEO Collector-Emitter Dark Current* VCE = 10V, Base Open – 1 100 nA hFE DC Current Gain VCE = 5.0V, IC = 500µA – 5000 – Symbol Parameter Test Conditions Min. Typ. Max. Unit DC CHARACTERISTICS IC(CTR) Collector Output Current*(1, 2) IF = 10mA, VCE = 10V, IB = 0 4N32, 4N33 50 (500) – – mA (%) 4N29, 4N30 10 (100) – – 4N31 5 (50) – – VCE(SAT) Saturation Voltage*(2) IF = 8mA, IC = 2.0mA 4N29, 4N30, 4N32, 4N33 – – 1.0 V 4N31 – – 1.2 AC CHARACTERISTICS ton Turn-on Time IF = 200mA, IC = 50mA, VCC = 10V –– 5.0 µS toff Turn-off Time 4N32, 4N33 IF = 200mA, IC = 50mA, VCC = 10V – – 100 µS 4N29, 4N30, 4N31 – –40 BW Bandwidth(3, 4) – 30 – kHz Symbol Characteristic Test Conditions Min. Typ. Max. Units VISO Input-Output Isolation Voltage(5) 4N29, 4N30, 4N31, 4N32, 4N33 II-O ≤ 1µA, Vrms, t = 1min. 5300 – – Vac(rms) 4N32* VDC 2500 – – V 4N33* VDC 1500 – – RISO Isolation Resistance(5) VI-O = 500VDC – 1011 – Ω CISO Isolation Capacitance(5) VI-O = Ø, f = 1MHz – 0.8 – pF |
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