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BYG60 Datasheet(PDF) 2 Page - NXP Semiconductors

No. de pieza BYG60
Descripción Electrónicos  Fast soft-recovery controlled avalanche rectifiers
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYG60 Datasheet(HTML) 2 Page - NXP Semiconductors

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1996 Jun 05
2
Philips Semiconductors
Preliminary specification
Fast soft-recovery
controlled avalanche rectifiers
BYG60 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• UL 94V-O classified plastic
package
• Shipped in 12 mm embossed tape.
DESCRIPTION
DO-214AC surface mountable
package with glass passivated chip.
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
handbook, 4 columns
MSA474
cathode
band
Top view
Side view
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYG60D
200
V
BYG60G
400
V
BYG60J
600
V
BYG60K
800
V
BYG60M
1000
V
VR
continuous reverse voltage
BYG60D
200
V
BYG60G
400
V
BYG60J
600
V
BYG60K
800
V
BYG60M
1000
V
IF(AV)
average forward current
averaged over any 20 ms period;
Ttp = 100 °C; see Fig.2
1.90
A
averaged over any 20 ms period;
Al2O3 PCB mounting (see Fig.7);
Tamb =60 °C; see Fig.3
0.90
A
averaged over any 20 ms period;
epoxy PCB mounting (see Fig.7);
Tamb =60 °C; see Fig.3
0.65
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj =Tj max prior to surge;
VR =VRRMmax
25
A


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