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BYM56E Datasheet(PDF) 2 Page - NXP Semiconductors

No. de pieza BYM56E
Descripción Electrónicos  Controlled avalanche rectifiers
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYM56E Datasheet(HTML) 2 Page - NXP Semiconductors

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1996 May 24
2
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYM56 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack
• Also available with preformed leads
for easy insertion.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD64) and symbol.
2/3 page (Datasheet)
MAM104
ka
,

,

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYM56A
200
V
BYM56B
400
V
BYM56C
600
V
BYM56D
800
V
BYM56E
1000
V
VRWM
crest working reverse voltage
BYM56A
200
V
BYM56B
400
V
BYM56C
600
V
BYM56D
800
V
BYM56E
1000
V
VR
continuous reverse voltage
BYM56A
200
V
BYM56B
400
V
BYM56C
600
V
BYM56D
800
V
BYM56E
1000
V
IF(AV)
average forward current
Ttp =60 °C;
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
3.5
A
Tamb =65 °C; PCB mounting
(see Fig.9); averaged over any
20 ms period; see Figs 3 and 4
1.4
A
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave;
Tj =Tj max prior to surge;
VR =VRRMmax
80
A


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