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AD8092AR-REEL7 Datasheet(PDF) 7 Page - Analog Devices

No. de pieza AD8092AR-REEL7
Descripción Electrónicos  Low Cost, High Speed Rail-to-Rail Amplifiers
Download  20 Pages
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Fabricante Electrónico  AD [Analog Devices]
Página de inicio  http://www.analog.com
Logo AD - Analog Devices

AD8092AR-REEL7 Datasheet(HTML) 7 Page - Analog Devices

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AD8091/AD8092
Rev. B | Page 7 of 20
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Rating
Supply Voltage
12.6 V
Power Dissipation
See Figure 4
Common-Mode Input Voltage
±VS
Differential Input Voltage
±2.5 V
Output Short-Circuit Duration
See Figure 4
Storage Temperature Range
−65°C to +125°C
Operating Temperature Range
−40°C to +85°C
Lead Temperature Range (Soldering 10 sec)
300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation in the AD8091/AD8092
package is limited by the associated rise in junction temperature
(TJ) on the die. The plastic encapsulating the die locally reaches
the junction temperature. At approximately 150°C, which is the
glass transition temperature, the plastic changes its properties.
Even temporarily exceeding this temperature limit may change
the stresses that the package exerts on the die, permanently
shifting the parametric performance of the AD8091/AD8092.
Exceeding a junction temperature of 175°C for an extended
period of time can result in changes in the silicon devices,
potentially causing failure.
The still-air thermal properties of the package (θJA), ambient
temperature (TA), and the total power dissipated in the package
(PD) can be used to determine the junction temperature of the die.
The junction temperature can be calculated as
(
)
JA
D
A
J
θ
P
T
T
×
+
=
The power dissipated in the package (PD) is the sum of the
quiescent power dissipation and the power dissipated in the
package due to the load drive for all outputs. The quiescent
power is the voltage between the supply pins (VS) times the
quiescent current (IS). Assuming the load (RL) is referenced to
midsupply, then the total drive power is VS/2 × IOUT, some of
which is dissipated in the package and some in the load
(VOUT × IOUT). The difference between the total drive power and
the load power is the drive power dissipated in the package.
(
)
power
load
power
drive
total
power
quiescent
PD
+
=
()
⎟⎟
⎜⎜
×
+
×
=
L
OUT
L
OUT
S
S
S
D
R
V
R
V
V
I
V
P
2
2
RMS output voltages should be considered. If RL is referenced to
VS−, as in single-supply operation, then the total drive power is
VS × IOUT.
If the rms signal levels are indeterminate, then consider the
worst case, when VOUT = VS/4 for RL to midsupply
()
2
4
L
S
S
S
D
R
V
I
V
P
+
×
=
In single-supply operation with RL referenced to VS−, worst case
is VOUT = VS/2.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degrada-
tion or loss of functionality.


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