FDD6N25 datasheet(3/9 Pages) FAIRCHILD

No. de pieza	FDD6N25

Descripción Electrónicos	250V N-Channel MOSFET

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FDD6N25 / FDU6N25 Rev. A

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

10

-1

10

0

10

1

10

-1

10

0

10

1

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom :

5.5 V

* Notes :

1. 250µs Pulse Test

2. T

C = 25

o

C

V

DS, Drain-Source Voltage [V]

24

68

10

12

10

0

10

1

150

oC

25

oC

-55

oC

* Notes :

1. V

DS = 40V

2. 250µs Pulse Test

V

GS, Gate-Source Voltage [V]

02468

10

1

2

3

4

5

6

V

GS = 20V

V

GS = 10V

* Note : T

J = 25

o

C

I

D, Drain Current [A]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

10

0

10

1

150oC

* Notes :

1. V

GS = 0V

2. 250µs Pulse Test

25

o

C

V

SD, Source-Drain voltage [V]

10

-1

10

0

10

1

0

50

100

150

200

250

300

350

400

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

* Note :

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

01

23

45

0

2

4

6

8

10

12

V

DS = 125V

V

DS = 50V

V

DS = 200V

* Note : I

D = 6A

Q

G, Total Gate Charge [nC]

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FDD6N25 Datasheet(PDF) 3 Page - Fairchild Semiconductor

FDD6N25 Datasheet(HTML) 3 Page - Fairchild Semiconductor

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