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IRF630S Datasheet(PDF) 8 Page - NXP Semiconductors

No. de pieza IRF630S
Descripción Electrónicos  N-channel TrenchMOS transistor
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

IRF630S Datasheet(HTML) 8 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
N-channel TrenchMOS
™ transistor
IRF630, IRF630S
MECHANICAL DATA
Fig.16. SOT404 surface mounting package. Centre pin connected to mounting base.
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
discharge during transport or handling.
2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18.
3. Epoxy meets UL94 V0 at 1/8".
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
A1
D1
D
max.
E
eLp
HD
Q
c
2.54
2.60
2.20
15.40
14.80
2.90
2.10
11
1.60
1.20
10.30
9.70
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
b
DIMENSIONS (mm are the original dimensions)
SOT404
0
2.5
5 mm
scale
Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads
(one lead cropped)
SOT404
e
e
E
b
D1
HD
D
Q
Lp
c
A1
A
13
2
mounting
base
98-12-14
99-06-25
August 1999
8
Rev 1.100


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