LCE2009S datasheet(5/16 Pages) PHILIPS

No. de pieza	LCE2009S

Descripción Electrónicos	NPN microwave power transistors

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Fabricante Electrónico	PHILIPS [NXP Semiconductors]

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5 / 16 page

1997 Mar 03

5

Philips Semiconductors

Product speciﬁcation

NPN microwave power transistors

LBE2003S; LBE2009S;

LCE2009S

CHARACTERISTICS

Tmb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

VCB = 20 V; IE =0

−−

0.1

µA

ICBO

collector cut-off current

VCB = 40 V; IE =0

LBE2003S

−−

150

µA

LBE2009S; LCE2009S

−−

250

µA

ICER

collector cut-off current

LBE2003S

VCB = 35 V; RBE = 220 Ω−

−

500

µA

LBE2009S; LCE2009S

VCB = 35 V; RBE = 100 Ω−

−

1000

µA

IEBO

emitter cut-off current

VEB = 1.5 V; IC =0

LBE2003S

−−

0.05

µA

LBE2009S; LCE2009S

−−

0.2

µA

hFE

DC current gain

VCE =5V; IC =30mA

15

−

150

VCE =5V; IC = 110 mA

15

−

150

Ccb

collector-base capacitance

VCB = 18 V; VEB = 1.5 V;

IE =IC = 0; f = 1 MHz

LBE2003S

−

0.3

−

pF

LBE2009S; LCE2009S

−

0.6

−

pF

Cce

collector-emitter capacitance

VCE = 18 V; VEB = 1.5 V;

IE =IC = 0; f = 1 MHz

LBE2003S

−

0.45

−

pF

LBE2009S; LCE2009S

−

0.6

−

pF

Ceb

emitter-base capacitance

VCB = 10 V; VEB =1V;

IE =IC = 0; f = 1 MHz

LBE2003S

−

1.7

−

pF

LBE2009S; LCE2009S

−

3.3

−

pF

LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15

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