LLE18150X datasheet(6/9 Pages) PHILIPS | NPN silicon planar epitaxial microwave power transistor

6 page

September 1994

Philips Semiconductors

Product speciﬁcation

NPN silicon planar epitaxial

microwave power transistor

LLE18150X

List of components (see Figs 3 and 4).

Notes

1. In thermal contact with TR1.

2. In thermal contact with DUT.

COMPONENT

DESCRIPTION

VALUE

ORDERING INFORMATION

TR1

transistor, BDT91 or equivalent

C1, C4

DC blocking chip capacitor

100 pF

ATC 100A101kp

C2, C3

trimmer capacitor

0.5 to 5.0 pF

Tekelec 727-1

C5, C6

feedthrough bypass capacitor

1500 pF

Erie 1250-003

electrolytic capacitor

µF, >30 V

diode BY239 or equivalent; note 1

diode BY239 or equivalent; note 2

4 turns 0.5 mm copper wire;

internal diameter = 2 mm

4 turns 0.5 mm copper wire;

internal diameter = 2 mm

linear potentiometer

4.7 k

Ω

resistor

100

Ω, 0.25 W

resistor

10 k

Ω, 0.25 W

resistor

Ω, 0.25 W

ferrite bead

Philips tube, 12NC = 4330 030 43081

4.2 x 2.2 x 3.2 mm (4B1)

Fig.4 Class AB bias circuit.

handbook, full pagewidth

MEA600

DUT

TR1

VCC

BIAS CIRCUIT

PREMATCHING TEST

CIRCUIT

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