LLE18150X datasheet(3/9 Pages) PHILIPS | NPN silicon planar epitaxial microwave power transistor

Nombre de pieza

Descripción

LLE18150X

NPN silicon planar epitaxial microwave power transistor ( 9 Page)

PHILIPS

3 page

September 1994

Philips Semiconductors

Product speciﬁcation

NPN silicon planar epitaxial

microwave power transistor

LLE18150X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Up to 0.2 mm from ceramic.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCER

collector-emitter voltage

RBE = 220 Ω−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

DC collector current

−

input power

f = 1.85 GHz; VCE = 24 V; class AB −

Ptot

total power dissipation

Tmb =75 °C

−

Tstg

storage temperature

−65

+150

°C

junction temperature

−

200

°C

Tsld

soldering temperature

≤ 10 s; note 1

−

235

°C

Fig.2 Power derating curve.

100

200

MBD741

150

( C)

Ptot

(W)

1 2 3 4 5 6 7 8 9

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