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BC847BVN-7 Datasheet(PDF) 3 Page - Diodes Incorporated |
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BC847BVN-7 Datasheet(HTML) 3 Page - Diodes Incorporated |
3 / 4 page DS30627 Rev. 4 - 2 3 of 4 BC847BVN www.diodes.com -1 -10 -100 -1000 -1 -10 -100 -1000 V = 5V CE I , COLLECTOR CURRENT (mA) C Fig. 5, DC Current Gain vs. Collector Current (BC857B Type) T = 25°C A T = -50°C A T = 150°C A -1 -0.1 -10 -100 -1000 I , COLLECTOR CURRENT (mA) C Fig. 6, Collector-Emitter Saturation Voltage vs. Collector Current (BC857B Type) T = 25°C A T = -50°C A T = 150°C A 0 -0.1 -0.2 -0.3 -0.4 -0.5 I C I B = 10 Characteristic (Note 5) Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -50 — — V IC = -10 µA, IB = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -45 — — V IC = -10mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5 — — V IE = -1 µA, IC = 0 DC Current Gain hFE 220 290 475 — VCE = -5.0V, IC = -2.0mA Collector-Emitter Saturation Voltage VCE(SAT) — -75 -250 -300 -650 mV IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA Base-Emitter Saturation Voltage VBE(SAT) — -700 -850 — -950 mV IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA Base-Emitter Voltage VBE(ON) -600 — -650 — -750 -820 mV VCE = -5.0V, IC = -2.0mA VCE =- 5.0V, IC = -10mA Collector-Cutoff Current ICBO — — — — -15 -4.0 nA µA VCB = -30V VCB = -30V, TA = 150°C Gain Bandwidth Product fT 100 200 — MHz VCE = -5.0V, IC = -10mA, f = 100MHz Collector-Base Capacitance CCBO — 3 4.5 pF VCB = -10V, f = 1.0MHz Electrical Characteristics PNP, BC857B Type (Q2) @ TA = 25°C unless otherwise specified -10 -100 -1000 -1 -10 -100 I , COLLECTOR CURRENT (mA) C Fig. 7, Gain Bandwidth Product vs Collector Current (BC857B Type) V = -5V CE 6 10 0 5 10 15 20 25 30 Cibo Cobo 0 4 2 8 12 14 16 18 20 V , REVERSE VOLTAGE (V) R Fig. 8, Capacitance vs. Reverse Voltage (BC857B Type) f = 1MHz Note: 5. Short duration pulse test used to minimize self-heating effect. |
Número de pieza similar - BC847BVN-7 |
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Descripción similar - BC847BVN-7 |
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