2N3663_01 datasheet(2/7 Pages) FAIRCHILD

No. de pieza	2N3663

Descripción Electrónicos	NPN RF Transistor

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Fabricante Electrónico	FAIRCHILD [Fairchild Semiconductor]

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NPN RF Transistor

(continued)

Electrical Characteristics

TA = 25°C unless otherwise noted

OFF CHARACTERISTICS

Symbol

Parameter

Test Conditions

Min

Max

Units

V(BR)CEO

Collector-Emitter Breakdown Voltage*

IC = 1.0 mA, IB = 0

12

V

V(BR)CBO

Collector-Base Breakdown Voltage

IC = 100

µA, I

E = 0

30

V

V(BR)EBO

Emitter-Base Breakdown Voltage

IE = 100

µA, I

C = 0

3.0

V

ICBO

Collector-Cutoff Current

VCB = 15 V, IE = 0

0.5

µA

IEBO

Emitter-Cutoff Current

VEB = 2.0 V, IC = 0

0.5

µA

ON CHARACTERISTICS*

hFE

DC Current Gain

VCE = 10 V, IC = 8.0 mA

20

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

SMALL SIGNAL CHARACTERISTICS

fT

Current Gain - Bandwidth Product

IC = 5.0 mA, VCE = 10 V,

f = 100 MHz

700

2100

MHz

Cob

Output Capacitance

VCB = 10 V, IE = 0, f = 1.0 MHz

0.8

1.7

pF

rb’CC

Collector Base Time Constant

IC = 8.0 mA, VCE = 10 V,

f = 79.8 MHz

80

pS

FUNCTIONAL TEST

NF

Noise Figure

IC = 1.0 mA, VCE = 6.0 V,

f = 60 MHz, Rg = 400

Ω

6.5

dB

Gpe

Amplifier Power Gain

IC = 6.0 mA, VCE = 12 V,

f = 200 MHz

1.5

dB

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