FQA7N80 datasheet(4/9 Pages) FAIRCHILD

No. de pieza	FQA7N80

Descripción Electrónicos	800V N-Channel MOSFET

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FQA7N80 Rev. A1

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation

Figure 8. On-Resistance Variation

vs. Temperature

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 11. Transient Thermal Response Curve

-100

-50

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Notes :

※

1. V

GS = 10 V

2. I

D = 3.3 A

T

J, Junction Temperature [

oC]

-100

-50

0

50

100

150

200

0.8

0.9

1.0

1.1

1.2

Notes:

※

1. V

GS =0V

2. I

D =250µA

T

J, Junction Temperature [

oC]

25

50

75

100

125

150

0

2

4

6

8

T

C, Case Temperature [

]

℃

10

0

10

1

10

2

10

3

10

-1

10

0

10

1

10

2

10µ s

DC

10 ms

1 ms

100µ s

Operation in This Area

is Limited by R

DS(on)

Notes :

※

1. T

C = 25

oC

2. T

J = 150

oC

3. Single Pulse

V

DS, Drain-Source Voltage [V]

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-2

10

-1

10

0

No t e s :

※

1 . Z

θ JC( t ) = 0. 63

/W M a x .

℃

2 . D u t y F a c t o r , D = t

1 /t 2

3 . T

JM - T C = P DM * Z θ JC(t )

s i n g le p u ls e

D= 0 . 5

0. 02

0. 2

0. 05

0. 1

0. 01

t

1 , S q uar e

W a v e P u l s e D u r a t i on [ s ec ]

t1

PDM

t2

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