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CDCE421RGERG4 Datasheet(PDF) 7 Page - Texas Instruments |
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CDCE421RGERG4 Datasheet(HTML) 7 Page - Texas Instruments |
7 / 30 page www.ti.com EXAMPLE: Programming Cycle of Six Words and Programming Into EEPROM EnterProgrammingSequence Word0 After8bits,thepayload dataistransferredto theRAMandisactive. Waitforatleast 10msbefore exitingEEPROM writephase,for safeoperation. Payload Word1 Payload Word5 Payload State Machine Jump State Machine Jump State2 State3 ® State3 State1 ® T0043-03 · · · · · · Enter Register Readback Mode and Related Timing Diagram CDCE421 SCAS842 – APRIL 2007 The following sequence shows how to enter programming mode and how the different words can be written. The addressing of Word0 … Word5 is shown in bold. After the word address, the payload for the respective word is clocked in. In this example, this is followed by a jump from State 2 → State 3 into enter EEPROM programming with EEPROM lock. In the EEPROM-programming state, it is necessary to wait at least 10 ms for safe programming. The last command is a jump from State 3 into State 1 (normal operation). Cycle power and verify that the device functions as programmed. Figure 4. Programming Cycle of Six Words and Programming Into EEPROM Similar to the enter programming mode sequence, the enter register read back mode is written into SDATA. After the command has been issued, the SDATA input is reconfigured as clock input. By applying one clock, the EEPROM content is read into shift registers. Now, by further applying clocks at SDATA, the EEPROM content can be clocked out and observed at OUTP/OUTN. There are 59 bits to be clocked out. With the 61st rising clock edge, the OUTP/OUTN pins are reconfigured back into normal operation. 7 Submit Documentation Feedback |
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