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PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 MARCH 94 FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp *Ptot=1 Watt ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL 2N6728 2N6729 2N6730 UNIT Collector-Base Voltage VCBO -60 -80 -100 V Collector-Emitter Voltage VCEO -60 -80 -100 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Power Dissipation at Tamb= 25°C Ptot 1W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated). PARAMETER SYMBOL 2N6728 2N6729 2N6730 UNIT CONDITIONS. MIN. MAX MIN. MAX MIN. MAX Collector-Base Breakdown Voltage V(BR)CBO -60 -80 -100 V IC=-0.1mA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -60 -80 -100 V IC=-1mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -5 -5 -5 V IE=-1mA, IC=0 Collector Cut-Off Current ICBO -1 -1 -1 µ A µ A µ A VCB=-60V, IE=0 VCB=-80V, IE=0 VCB=-100V, IE=0 Emitter Cut-Off Current IEBO -1 -1 -1 µ A VEB=-5V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) -0.5 -0.35 -0.5 -0.35 -0.5 -0.35 VIC=-250mA,IB=-10mA* IC=-250mA,IB=-25mA* Base-Emitter Turn-On Voltage VBE(on) -1.2 -1.2 -1.2 V IC=-250mA, VCE=-1V* Static Forward Current Transfer Ratio hFE 80 50 20 250 80 50 20 250 80 50 20 250 IC=-50mA, VCE=-1V* IC=-250mA, VCE=-1V* IC=-500mA, VCE=-1V* Transition Frequency fT 50 500 50 500 50 500 MHz IC=-50mA, VCE=-10V Collector Base Capacitance CCB 30 30 30 pF VCE=-10V, f=1MHz E-Line TO92 Compatible 2N6728 2N6729 2N6730 3-9 C B E |
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