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SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 – FEBRUARY 1996 7 COMPLEMENTARY TYPES – BSR43 - BSR33 BSR41 - BSR31 PARTMARKING DETAIL – BSR43 - AR4 BSR41 - AR2 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BSR41 BSR43 UNIT Collector-Base Voltage VCBO 70 90 V Collector-Emitter Voltage VCEO 60 80 V Emitter-Base Voltage VEBO 5V Peak Pulse Current ICM 2A Continuous Collector Current IC 1A Base Current IB 100 mA Power Dissipation at Tamb=25°C PTOT 1W Operating and Storage Temperature Range Tj:Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Base BSR43 Breakdown Voltage BSR41 V(BR)CBO 90 70 V IC=100µA Collector-Emitter BSR43 Breakdown Voltage BSR41 V(BR)CEO 80 60 VIC=10mA * Emitter-Base Breakdown Voltage V(BR)EBO 5V IE=10µA Collector Cut-Off Current ICBO 100 50 nA µA VCB=60V VCB=60V, Tamb =125°C Collector-Emitter Saturation Voltage VCE(sat) 0.25 0.5 V V IC =150mA, IB =15mA IC =500mA, IB =50mA Base-Emitter Saturation Voltage VBE(sat) 1.0 1.2 V V IC =150mA, IB =15mA IC =500mA, IB =50mA Static Forward Current Transfer Ratio hFE 30 100 50 300 IC =100µA, VCE =5V IC =100mA, VCE =5V IC =500mA, VCE =5V Collector Capacitance Cc 12 pF VCB =10V, f=1MHz Emitter Capacitance Ce 90 pF VEB =0.5V, f=1MHz Transition Frequency fT 100 MHz IC=50mA, VCE=10V f =35MHz Turn-On Time Ton 250 ns VCC=20V, IC =100mA IB1 =IB2 =5mA Turn-Off Time Toff 1000 ns *Measured under pulsed conditions. Pulse width=300 µs. Duty cycle ≤2% For typical characteristics graphs see FMMT493 datasheet. BSR41 BSR43 C C B E SOT89 3 - 68 |
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