FMMT413TA datasheet(3/6 Pages) ZETEX

No. de pieza	FMMT413TA

Descripción Electrónicos	SOT23 NPN silicon planar avalanche transistor

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Fabricante Electrónico	ZETEX [Zetex Semiconductors]

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FMMT413

Issue 3 - March 2006

3

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Electrical characteristics (at Tamb = 25°C unless otherwise stated)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Collector-base breakdown

voltage

BVCBO

150

V

Collector-emitter

breakdown voltage

BVCES

150

V

IC = 100 A

Collector-emitter

breakdown voltage

BVCEO

50

V

IC = 10mA

Emitter-base breakdown

voltage

BVEBO

6V

IE = 100 A

Collector cut-off current

ICBO

100

nA

VCB = 120V

Emitter cut-off current

IEBO

100

nA

VEB = 4V

Collector-emitter saturation

voltage

VCE(sat)

150

mV

IC = 10mA,

IB = 1mA

Base-emitter saturation

voltage

VBE(sat)

800

mV

IC = 10mA,

IB = 1mA

Current in second

breakdown (pulsed)

IUSB

22

A

VC=110V, CCE=4.7nF

(*)

NOTES:

(*) Measured with a circuit possessing an approximate loop inductance of 12nH.

25

A

VC=130V, CCE=4.7nF

(*)

Static forward current

transfer ratio

hFE

50

IC = 10mA,

VCE = 10V

Collector-emitter

inductance

Lce

2.5

nH

Standard SOT23

leads

Transition frequency

fT

150

MHz

IC = 10mA, VCE = 5V,

f = 20MHz

Output capacitance

COBO

2pF

VCB = 10V, IE = 0,

f = 1MHz

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