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IRF530NLPBF Datasheet(PDF) 1 Page - International Rectifier

No. de pieza IRF530NLPBF
Descripción Electrónicos  HEXFET Power MOSFET
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRF530NLPBF Datasheet(HTML) 1 Page - International Rectifier

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IRF530NSPbF
IRF530NLPbF
HEXFET® Power MOSFET
03/10/04
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
2.15
RθJA
Junction-to-Ambient (PCB Mounted,steady-state)**
–––
40
Thermal Resistance
www.irf.com
1
VDSS = 100V
RDS(on) = 90mΩ
ID = 17A
S
D
G
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the
lowest possible on-resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF530NL) is available for low-profile applications.
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
‡
17
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
‡
12
A
IDM
Pulsed Drain Current
‡
60
PD @TA = 25°C
Power Dissipation
3.8
W
PD @TC = 25°C
Power Dissipation
70
W
Linear Derating Factor
0.47
W/°C
VGS
Gate-to-Source Voltage
± 20
V
IAR
Avalanche Current

9.0
A
EAR
Repetitive Avalanche Energy

7.0
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ‡
7.4
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
D2Pak
IRF530NSPbF
TO-262
IRF530NLPbF
°C/W
PD - 95100


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