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CDBG860-G Datasheet(PDF) 1 Page - Comchip Technology |
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CDBG860-G Datasheet(HTML) 1 Page - Comchip Technology |
1 / 2 page Page1 Parameter Max. Forward rectified current (See Fig.1) VR = VRRM TA = 25 oC VR = VRRM TA = 100 oC Max. Forward surge current Max. Reverse current Diode junction capacitance Max. Storage temperature Operating temperature -55 to +125 Thermal resistance Junction Ambient f=1MHz and applied 4vDC reverse Voltage m A p F I O I R I FSM V RRM V RMS V R V F R JA 8.3ms single half sine-wave superimposed on rate load (JEDEC method) 8.0 20 30 40 14 21 28 20 0.55 0.70 30 40 150 1.0 50 55 700 +150 A Repetitive Peak Reverse Voltage Marking Code RMS voltage Continuous reverse voltage Maximum forward voltage V V V V A oC/ W oC oC www.comchiptech.com Unit CDBG820-G CDBG830-G CDBG840-G 50 60 35 42 50 60 CDBG850-G CDBG860-G SS82 SS83 SS84 SS85 SS86 Symbol TSTG Cj Case: Molded plastic, G package (6.9mmx4.5mm) Terminals: Solder plated, solderable per MIL-STD-750, method 2026. Polarity: Indicated by cathode band Mounting position: Any Approx. Weight: 0.00585 ounce, 0.195 gram Mechanical Data: Maximum Ratings (at TA = 25 oC unless otherwise noted) Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds enviromental standards of MIL-S-19500/228 Low leakage current Features: Reverse Voltage: 20 ~ 60 Volts Forward Current: 8 A CDBG820-G THRU CDBG860-G (RoHS Device) SMD Schottky Barrier Diode 0.283(7.2) 0.260(6.6) 0.012(0.3) Typ. 0.189(4.8) 0.244(6.2) 0.228(5.8) 0.040 (1.0) Typ. 0.040(1.0) Typ. Dimensions in inches and (millimeters) G package 0.152(3.8) 0.144(3.6) 0.032(0.8) Typ. 0.165(4.2) 0.098(2.5) 0.075(1.9) |
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