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NE334S01 Datasheet(PDF) 1 Page - NEC |
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NE334S01 Datasheet(HTML) 1 Page - NEC |
1 / 6 page DESCRIPTION The NE334S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise and high asso- ciated gain make it suitable for TVRO and other commercial systems. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. PART NUMBER NE334S01 PACKAGE OUTLINE S01 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX NF1 Noise Figure, VDS = 2.0 V, ID = 15 mA, f = 4 GHz dB 0.25 0.35 GA1 Associated Gain, VDS = 2.0 V, ID = 15 mA, f = 4 GHz dB 15.0 16.0 IDSS Saturated Drain Current, VDS = 2.0 V, VGS = 0 V mA 20 80 150 gm Transconductance, VDS = 2.0 V, ID = 14 mA mS 70 85 VGS(off) Gate to Source Cutoff Voltage, VDS = 2.0 V, ID = 100 µA, V -0.2 -0.9 -2.5 IGSO Gate to Source Leak Current, VGS = -3.0 V µA 0.5 10 NE334S01 FEATURES • VERY LOW NOISE FIGURE: 0.25 dB TYP at 4 GHz • HIGH ASSOCIATED GAIN: 16.0 dB TYP at 4 GHz • GATE WIDTH: 280 µm • TAPE & REEL PACKAGING OPTION AVAILABLE • LOW COST PLASTIC PACKAGE ELECTRICAL CHARACTERISTICS (TA = 25°C) MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY Frequency, f (GHz) C BAND SUPER LOW NOISE HJ FET California Eastern Laboratories VDS = 2 V ID = 10 mA MSG. MAG. |S21S| 2 24 20 16 12 8 4 1 2 4 68 10 14 20 30 PRELIMINARY DATA SHEET Note: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening tuned for the "generic" type but not each specimen. SYMBOLS CHARACTERISTIC UNITS MIN TYP MAX VDS Drain to Source Voltage V 2 2.5 ID Drain Current mA 15 20 PIN Input Power dBm 0 RECOMMENDED OPERATING CONDITION (TA = 25°C) |
Número de pieza similar - NE334S01_00 |
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Descripción similar - NE334S01_00 |
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