Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE350184C

K-BAND SUPER LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

FEATURES

• Super low noise figure and high associated gain

• Micro-X ceramic (84C) package

APPLICATIONS

• 20 GHz-band DBS LNB

• Other K-band communication systems

ORDERING INFORMATION

Part Number

Order Number

Package

Quantity

Marking

Supplying Form

NE350184C-T1

NE350184C-T1-A

1 kpcs/reel

A

NE350184C-T1A

NE350184C-T1A-A

84C (Pb-Free)

5 kpcs/reel

• 12 mm wide embossed taping

• Pin 4 (Gate) faces the perforation side

of the tape

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: NE350184C

°C)

Parameter

Symbol

Ratings

Unit

Drain to Source Voltage

4

V

Gate to Source Voltage

−3

V

Drain Current

mA

Gate Current

80

Total Power Dissipation

Note

165

mW

Channel Temperature

+150

°C

Storage Temperature

−65 to +150

°C

Note Mounted on 1.08 cm

2

× 1.0 mm (t) glass epoxy PCB

Document No. PG10584EJ01V0DS (1st edition)

Date Published November 2005 CP(K)