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BAP64-06W Datasheet(PDF) 2 Page - NXP Semiconductors |
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BAP64-06W Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 2001 Apr 17 2 Philips Semiconductors Product specification Silicon PIN diode BAP64-06W FEATURES • High voltage, current controlled • RF resistor for RF attenuators and switches • Low diode capacitance • Low diode forward resistance • Low series inductance • For applications up to 3 GHz. APPLICATIONS • RF attenuators and switches. DESCRIPTION Two planar PIN diodes in common anode configuration in a SOT323 small SMD plastic package. PINNING PIN DESCRIPTION 1 cathode 1 2 cathode 2 3 common connection handbook, halfpage MGU320 21 3 Top view 3 12 Marking code: V4-. Fig.1 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR continuous reverse voltage − 100 V IF continuous forward current − 100 mA Ptot total power dissipation Ts =90 °C − 240 mW Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C |
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