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IRF7N1405 Datasheet(PDF) 3 Page - International Rectifier

No. de pieza IRF7N1405
Descripción Electrónicos  HEXFET POWER MOSFET SURFACE MOUNT (SMD-1)
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRF7N1405 Datasheet(HTML) 3 Page - International Rectifier

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IRF7N1405
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
15
-60 -40 -20 0
20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
J
°
V
=
I =
GS
D
10V
55A
44.555.566.5
7
VGS, Gate-to-Source Voltage (V)
10
100
1000
VDS = 25V
20
µs PULSE WIDTH
TJ = 150°C
TJ = 25°C
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
10
100
1000
20
µs PULSE WIDTH
Tj = 150°C
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.5V
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
10
100
1000
20
µs PULSE WIDTH
Tj = 25°C
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.5V


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