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SI4420DY Datasheet(PDF) 5 Page - NXP Semiconductors |
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SI4420DY Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 12 page Philips Semiconductors Si4420DY N-channel enhancement mode field-effect transistor Product data Rev. 01 — 28 May 2001 5 of 12 9397 750 08239 © Philips Electronics N.V. 2001. All rights reserved. 8. Characteristics Table 5: Characteristics Tj =25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Static characteristics VGS(th) gate-source threshold voltage ID = 250 µA; VDS =VGS; Figure 9 1 −− V IDSS drain-source leakage current VDS =30V; VGS =0V Tj =25 °C −− 1 µA Tj =55 °C −− 5 µA IGSS gate-source leakage current VGS = ±20 V; VDS =0V −− 100 nA ID(on) on-state drain current VDS ≥ 5 V; VGS =10V 30 − A RDSon drain-source on-state resistance VGS = 10 V; ID = 12.5 A; Figure 7 and 8 − 7.3 9 m Ω VGS = 4.5 V; ID = 10.5 A; Figure 7 and 8 − 10.9 13 m Ω Dynamic characteristics gfs forward transconductance VDS =15V; ID =7A; Figure 11 − 15 − S Qg(tot) total gate charge ID = 12.5 A; VDD =15V; VGS =10V; Figure 14 − 64.5 120 nC Qgs gate-source charge − 7.6 − nC Qgd gate-drain (Miller) charge − 11.5 − nC td(on) turn-on delay time VDD =15V; RD =15 Ω; VGS =10V; RG =6 Ω− 12 30 ns tr turn-on rise time − 15 60 ns td(off) turn-off delay time − 60 150 ns tf turn-off fall time − 50 140 ns Source-drain (reverse) diode VSD source-drain (diode forward) voltage IS = 2.3 A; VGS =0V; Figure 13 − 0.7 1.1 V trr reverse recovery time IS = 2.3 A; dIS/dt = −100 A/µs − 60 − ns Tj =25 °C and 150 °C; VDS > ID xRDSon Fig 5. Output characteristic; drain current as a function of drain-source voltage; typical values. Fig 6. Transfer characteristic: drain current as function of gate-source voltage; typical values 03ae56 0 10 20 30 40 50 0 0.5 1 1.5 2 VDS (V) ID (A) VGS = 3 V 4 V 10 V 03ae58 0 10 20 30 40 50 01 23 4 VGS (V) ID (A) VDS > ID x RDSon 25 ºC 150 ºC |
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