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SI4420DY Datasheet(PDF) 5 Page - NXP Semiconductors

No. de pieza SI4420DY
Descripción Electrónicos  N-channel enhancement mode field-effect transistor
Download  12 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

SI4420DY Datasheet(HTML) 5 Page - NXP Semiconductors

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Philips Semiconductors
Si4420DY
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 28 May 2001
5 of 12
9397 750 08239
© Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
VGS(th)
gate-source threshold voltage
ID = 250 µA; VDS =VGS; Figure 9
1
−−
V
IDSS
drain-source leakage current
VDS =30V; VGS =0V
Tj =25 °C
−−
1
µA
Tj =55 °C
−−
5
µA
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0V
−−
100
nA
ID(on)
on-state drain current
VDS ≥ 5 V; VGS =10V
30
A
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 12.5 A; Figure 7 and 8
7.3
9
m
VGS = 4.5 V; ID = 10.5 A; Figure 7 and 8
10.9
13
m
Dynamic characteristics
gfs
forward transconductance
VDS =15V; ID =7A; Figure 11
15
S
Qg(tot)
total gate charge
ID = 12.5 A; VDD =15V; VGS =10V; Figure 14
64.5
120
nC
Qgs
gate-source charge
7.6
nC
Qgd
gate-drain (Miller) charge
11.5
nC
td(on)
turn-on delay time
VDD =15V; RD =15 Ω; VGS =10V; RG =6 Ω−
12
30
ns
tr
turn-on rise time
15
60
ns
td(off)
turn-off delay time
60
150
ns
tf
turn-off fall time
50
140
ns
Source-drain (reverse) diode
VSD
source-drain (diode forward) voltage IS = 2.3 A; VGS =0V; Figure 13
0.7
1.1
V
trr
reverse recovery time
IS = 2.3 A; dIS/dt = −100 A/µs
60
ns
Tj =25 °C and 150 °C; VDS > ID xRDSon
Fig 5.
Output characteristic; drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristic: drain current as
function of gate-source voltage; typical values
03ae56
0
10
20
30
40
50
0
0.5
1
1.5
2
VDS (V)
ID
(A)
VGS = 3 V
4 V
10 V
03ae58
0
10
20
30
40
50
01
23
4
VGS (V)
ID
(A)
VDS > ID x RDSon
25 ºC
150 ºC


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